sangdest microelectronics technical data green products data sheet n1009, rev. c ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 209cmq series 209CMQ135/209cmq150 schottky rectifier applications: high current switching power supply plating power supply free-wheeling diodes reverse battery protection converters ups system welding features: ? 175 t j operation ? center tap module ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? this is a pb ? free device ? all smc parts are traceable to the wafer lot ? additional testing can be offered upon request mechanical dimensions: in mm/inches prm4 (isolated) marking,molding resin marking for 209CMQ135/150, 1 st row ss yywwl, 2 nd row 209CMQ135/150 where yy is the manufacture year ww is the manufacture week code l is the wafer?s lot number molding resin epoxy resin ul:94v-0
sangdest microelectronics technical data green products data sheet n1009, rev. c ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 209cmq series maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 135(209CMQ135) 150(209cmq150) v 100 per leg max. average forward current i f(av) 50% duty cycle @t c =110c, rectangular wave form 200 per device a max. peak one cycle non- repetitive surge current (per leg) i fsm 8.3 ms, half sine pulse 1440 a electrical characteristics: characteristics symbol condition max. units v f1 @ 100a, pulse, t j = 25 c @ 200a, pulse, t j = 25 c 1.03 1.22 v max. forward voltage drop (per leg) * v f2 @ 100a, pulse, t j = 125 c @ 200a, pulse, t j = 125 c 0.71 0.82 v max. reverse current at dc condition i r1 @v r = rated v r t j = 25 c 3 ma max. reverse current i r2 @v r = rated v r t j = 125 c 45 ma max. junction capacitance c t @v r = 5v, t c = 25 c f sig = 1mhz 3000 pf max. voltage rate of change(rated v r ) dv/dt - 10,000 v/ s * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +175 c max. storage temperature t stg - -55 to +175 c maximum thermal resistance junction to case (per leg) r jc dc operation 0.7 c/w maximum thermal resistance junction to case (per device) r jc dc operation 0.35 c/w typical thermal resistance, case to heat sink r cs mounting surface, smooth and greased 0.10 c/w mounting torque 24(min) 35(max) mounting torque t m - terminal torque 35(min) 46(max) kg-cm approximate weight wt - 79 g case style prm4 (isolated)
sangdest microelectronics technical data green products data sheet n1009, rev. c ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 209cmq series
sangdest microelectronics technical data green products data sheet n1009, rev. c ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 209cmq series disclaimer: 1- the information given herein, including the specifications and dimensions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchasers are advised to c ontact the smc - sangdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliability is required (suc h as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensur ed by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the user?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) c o., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations..
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